| PART |
Description |
Maker |
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| 5SMX12K1273 |
IGBT-Die 75 A, 1200 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
ABB Semiconductors
|
| APT33GF120HR |
Fast IGBT 1200V 38A
The Fast IGBT is a new generation of high voltage power IGBTs
|
Advanced Power Technology Ltd.
|
| FID35-06C IXYSCORP-FID35-06C |
Fast IGBT Chopper in ISOPLUS i4-PACTM 38 A, 600 V, N-CHANNEL IGBT
IGBT Discretes
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 5SMY12M1200 |
IGBT-Die
|
The ABB Group
|
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SGW25N120 |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
|
INFINEON[Infineon Technologies AG]
|
| IRG4CC50SB |
IRG4CC50SB IGBT Die in Wafer Form
|
International Rectifier
|
